Title:
PRODUCTION DEVICE FOR AMORPHOUS SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS6030126
Kind Code:
A
Abstract:
PURPOSE:To recover SiH4, etc. as raw material gases discharged as they are left as they are not decomposed from gases which have been discharged on a film formation from a-Si, etc., and to enable reutilization by connecting a pressure vessel, which can be sealed hermetically by itself and can be cooled up to the temperature of condensation or less of a reaction gas, to an exhaust system. CONSTITUTION:A pressure vessel 27 is installed through a valve 21 in a shape that the vessel 27 runs parallel with an exhaust section from a reaction chamber 1. A trap for liquid nitrogen 28 is mounted at the center of the pressure vessel in a coaxial manner, and the wall surface of the trap is kept at the temperature of liquid nitrogen. The pressure vessel 27 and the reaction chamber 1 are connected by pipes through valves 24, 25. The inside of the reaction chamber is evacuated normally to a vaccum through a valve 22, and air is discharged by opening valves 21 and 23 on a reaction. A raw material gas not reacted is liquefied in the wall surface of the vessel by cooling the whole pressure vessel up to the temperature of liquid nitrogen and collected at that time. The collected gas not reacted is confined in the pressure vessel, the temperature of the vessel is returned to room temperature, and the confined gas is gasified again and utilized.
Inventors:
MARUYAMA KAZUMI
ICHIMURA TAKESHIGE
ICHIMURA TAKESHIGE
Application Number:
JP13857083A
Publication Date:
February 15, 1985
Filing Date:
July 28, 1983
Export Citation:
Assignee:
FUJI DENKI SOGO KENKYUSHO KK
International Classes:
H01L31/04; H01L21/205; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Iwao Yamaguchi