Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS5879738
Kind Code:
A
Abstract:
PURPOSE:To permit solder to be reliably welded without subjecting a semiconductor wafer to any thermal shock, by a method wherein a layer made of a metal having a melting point lower than the boiling point of a flux in a soldering paste is formed on an ohmic electrode, and after the soldering paste is formed, the semiconductor wafer is heated in the atmospheric air. CONSTITUTION:After an ohmic electrode 1 is formed, a metal layer 3 made of a metal having a melting point lower than the boiling point of a flux in a soldering paste is formed on the electrode 1. Then, a soldering paste 4 is applied thereto. Next, a semiconductor wafer 2 is heated in the atmosphere above the melting point of the soldering paste 4 thereby to melt the solder as well as vaporize the flux. Thus, a solder layer 4a is formed on the ohmic electrode 1 by utilizing the cohesiveness of the molten solder.
Inventors:
JIMI EIJI
NAKAMURA KISAKU
NAKAMURA KISAKU
Application Number:
JP17780281A
Publication Date:
May 13, 1983
Filing Date:
November 07, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/60; H01L21/52; H01L21/58; (IPC1-7): H01L21/58
Attorney, Agent or Firm:
Eiji Morota