Title:
VAPOR GROWTH METHOD
Document Type and Number:
Japanese Patent JPS6042816
Kind Code:
A
Abstract:
PURPOSE:To grow compound semiconductor crystal with a low O2 concentration by ionizing or exciting H molecule or a part of atoms to be distributed for vapor growth to improve the reduction property of H2 gas. CONSTITUTION:The air in a chamber 2 and an ionizing device is exhausted to high vacuum. After that, mixed vapor 7 of trimethyl aluminium and trimethyl gallium is introduced through a pipe 6 into the chamber 2, using arsine and H2 a carriers, while H2 15 is introduced from an inlet 14 into the ionizing device. The inside of the chamber 2 and the ionizing device is maintained 10<-1>-10<-2>atm. by controlling the air discharging and introducing speeds. Under this condition, the temperature of a substrate 4 is raised to activate the substrate surface. Subsequently, glow discharge is generated between an electrode 10 and a central conductor 12 to ionize or excite the H2 passing there. Although the H2 partially returns into the balanced condition when it is injected into the chamber 2 through the junction 8, most of it is introduced into the chamber and reacts actively with the residual gas. The number of O2 atoms to be taken into the substrate is thereby remarkably reduced, so that a substrate of desirable quality can be grown.
Inventors:
HORIKOSHI YOSHIHARU
Application Number:
JP15018283A
Publication Date:
March 07, 1985
Filing Date:
August 19, 1983
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Toshio Takayama
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