METHOD OF PRODUCING PIN SEMICONDUCTOR DEVICE - EXXON RESEARCH ENGINEERING CO

Title:

METHOD OF PRODUCING PIN SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS6091627

Kind Code:

A

Abstract:

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Inventors:

SEODOORU DEII MOUSUTEIKASU
EICHI POORU MARUSUKA

Application Number:

JP19966984A

Publication Date:

May 23, 1985

Filing Date:

September 26, 1984

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Assignee:

EXXON RESEARCH ENGINEERING CO

International Classes:

H01L31/04; C23C14/14; H01L21/203; H01L29/04; H01L29/861; H01L29/868; (IPC1-7): H01L21/203; H01L21/285; H01L31/04

Attorney, Agent or Firm:

Aoki Akira

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