Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5825263
Kind Code:
A
Abstract:
PURPOSE: To prevent the breakdown of junction due to wiring material by a method wherein a material easy to react to an electrode wiring is provided on the wiring.
CONSTITUTION: A poly-Si layer 8 is superposed on an Al electrode wiring 6. Al of the wiring 6 reacts to an impurity diffusion layer 2 and the poly-Si layer 8. The velocity of the reaction of Al to the diffusion layer 2 is controlled, since its reaction to the poly-Si layer 8 advances more easily than the former, and thus a region produced by the mutual diffusion is made shallow. Therefore, the breakdown of junction due to the penetration of Al can be prevented even when the junction is shallow, and thus the high integration of the device by using the shallow junction is enabled.
Inventors:
MASUKO YOUJI
KAYANO SHINPEI
KAYANO SHINPEI
Application Number:
JP12490681A
Publication Date:
February 15, 1983
Filing Date:
August 07, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/768; H01L21/28; H01L29/43; H01L29/45; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Shinichi Kusano
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