Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
LIFTING APPARATUS OF SINGLE CRYSTAL SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS59195597
Kind Code:
A
Abstract:
PURPOSE:To reduce considerably the length of expansion of a chamber without increasing the length of a shaft and the height of the apparatus excessively by combining the rotation and lift of the shaft against a lifting member and the lift of the lifting member itself, in a shaft-system lifting machine which is provided with an expandable chamber for taking out a crystal. CONSTITUTION:A shaft 5b is interconnected with a lifting machine 12, which is guided with a guide shaft 6b, so that the shaft may be able to rotated and lift, through a seal 13, fixed to a rotating part 14, and supported by a guide shaft 16, which is moved up and down by means of a lifting part 15, through an arm 17. First, a seed crystal 8 is fixed to the lower end of the shaft 5b, and the crystal 8 is brought into contact with a molten liquid 9 of a semiconductor by lowering the member 12 and lowering simultaneously the shaft 5b against the member 12. Thus a single crystal is grown while revolving by means of the driving part 14. As the crystal is grown, the member 12 is raised slowly to lift the shaft 5b. When a single crystal 10 having a specified length is formed, the revolution of the shaft 5b and the lifting of the member 12 is stopped, and the shaft 5b is raised against the member 12 by lifting a shaft 16 through the driving part 15. When the crystal 10 is raised into a crystal discharging chamber 4b across an interrupting valve 3, the ascension of the shaft 5b is stopped and the valve 3 is closed.

Inventors:
TAKAHASHI TAKAO
HAYASHI SHINGO
SUGIYAMA HISATAKA
TADA YOSHIAKI
OOISHI TOSHIO
Application Number:
JP6598683A
Publication Date:
November 06, 1984
Filing Date:
April 14, 1983
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TOSHIBA MACHINE CO LTD
International Classes:
C30B15/30; (IPC1-7): C30B15/30



 
Previous Patent: JPS59195596

Next Patent: APPARATUS FOR EPITAXIAL VAPOR DEPOSITION