PURPOSE: To improve exposure illuminance and to improve through-put by discharging pure water immediately before or simultaneously with ultraviolet irradiation toward a part of exposure in ultraviolet exposure in a periphery of a resist.

CONSTITUTION: After a wafer 1 on a rotation chuck 2 arranged inside a cup 8 is coated with a resist 5, exposure is performed for a peripheral part excepting an orientation flat part of the wafer 1 by an irradiation part 3 connected to an optical fiber 4 while the wafer is rotated. Pure water is discharged from a pure water discharge nozzle 6 to a part of exposure of the resist 5 several seconds before the irradiation and resist particle through the irradiation is arrested thereby. It is also possible to continuously discharge the pure water or to discharge it for several seconds simultaneously with exposure. The pure water functions to flow outward radially in a resist irradiation part, and resist material particle by bubbling of nitrogen is arrested by pure water, washed away from the resist 5 and discharged from a drain pipe 9 of the cup 8.