PURPOSE: To prevent the deterioration of selectivity and throughput resulting from forming of W film on a susceptor through the transition of the W film formed in the edge part of the periphery of the wafer and on the rear surface of the wafer by supporting the wafer through point contact and by conducting selective CVD through blowing nonreactive gas against the wafer from the rear surface of the wafer.

CONSTITUTION: In the manufacture of a semiconductor device for forming CVD film on a semiconductor wafer 32 by selective CVD, the semiconductor wafer 32 is supported by point contact and nonreactive gas is blown against the semiconductor wafer 32 from the rear surface of the semiconductor wafer 32 for the purpose of conducting said selective CVD. For example, the wafer 32 is arranged on the protrusion 34 of a susceptor 33, the rear surface of the wafer 32 is separated from the top surface of the susceptor 33 by the height of the protrusion 34 and supported, and selective WCVD is conducted when reactive gas 40 is supplied from a reactive gas inlet 37 while inert gas 39 is supplied to the inside of the susceptor 33. At that time, the inert gas 39 coming out from holes 35 of the top surface of a chamber 33 is hitted on the rear surface of the wafer 32 and thereafter flows radially outward to act so that the reactive gas 40 does not come in contact with the rear surface of the wafer 32.