MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS59955

Kind Code:

A

Abstract:

PURPOSE: To improve the yield of manufacturing a semiconductor device by forming a conductive film on the second main surface which includes a hole, removing the conductive film and a substrate between elements to form grooves and forming an electrode layer on the conductive film, thereby obtaining the characteristics and the reliability.

CONSTITUTION: Electrodes 13, 14 are formed on the active region 12 of a plurality of elements formed on the first main surface of a compound semiconductor substrate 11. The first main surface of the substrate 11 is secured to a supporting plate. A hole is formed to reach the electrodes 13, 14 on the second main surface of the substrate 11. A conductive film 23 is formed on the second main surface which includes a hole. Grooves are formed by removing the film 23 between elements and the substrate 11. An electrode layer 25 is formed on the film 23.

Inventors:

SHIMAZAKI MASAHIKO
SAKAGUCHI SHINGO

Application Number:

JP10959882A

Publication Date:

January 06, 1984

Filing Date:

June 25, 1982

Export Citation:

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Assignee:

FUJITSU LTD

International Classes:

H01L29/80; H01L21/338; H01L21/8232; H01L27/06; H01L27/08; H01L29/812; (IPC1-7): H01L21/76; H01L29/80

Attorney, Agent or Firm:

Sadaichi Igita

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