Title:
LATERAL LIGHT EMITTING LIGHT EMITTING DIODE ARRAY STRUCTURE
Document Type and Number:
Japanese Patent JPS6032372
Kind Code:
A
Abstract:
PURPOSE:To eliminate a light leakage by forming light absorbing layers on the opposite side to the junction side of the first and second conductive type layers, and obliquely forming a rear end disposed at opposite side to the light emitting surface. CONSTITUTION:The surface of a P type layer 1 of an LED wafer 10, a P type side electrode 4 of the surface of an N type layer 2, and an N type side electrode 5 are heat treated. High density Zn- and Ge-doped layers 6, 7 are formed on the surface, and acted as a light absorbing layer for absorbing the light. A plurality of fine slots 7 which exceed a P-N junction surface 3 are formed from the side of the layer 1, the end perpendicularly crossing the slots 8 is cut substantially perpendicularly to the P-N junction surface 3 as a light emitting surface 10a, and the rear end 10b of the opposite side is obliquely cut so that the angle to the surface 3 becomes acute angle at the side of the layer 1. An LED array 20 is die bonded onto an insulating substrate 11, wired, and the rear end 10b is covered with insulating light shielding resin 12.
Inventors:
NOZAKI NOBUHARU
IIJIMA TOSHIO
KAWAJIRI KAZUHIRO
MIZOBUCHI YUUZOU
IIJIMA TOSHIO
KAWAJIRI KAZUHIRO
MIZOBUCHI YUUZOU
Application Number:
JP14130283A
Publication Date:
February 19, 1985
Filing Date:
August 02, 1983
Export Citation:
Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
B41J2/44; B41J2/45; B41J2/455; H01L27/15; H01L33/08; H01L33/10; H01L33/30; H01L33/40; H01L33/62; (IPC1-7): B41J3/21; H01L33/00
Attorney, Agent or Firm:
Yanagida Seishi