Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6028235
Kind Code:
A
Abstract:
PURPOSE:To obtain a film, quality thereof is uniform and the state of the interface thereof is excellent, by keeping a semiconductor substrate under pressure of one atmosphere pressure or lower and irradiating ultraviolet beams having a wavelength of 3,000Angstrom or less to purify the surface of the substrate and immediately applying a film without exposing the substrate in atmospheric air when an insulating film or the semiconductor film is applied on the substrate. CONSTITUTION:A chamber 101 is partitioned into a substrate chamber 104 and a lamp chamber 103 by a synthetic quartz board 102, and a semiconductor substrate 108, on the surface thereof an insulating film or a semiconductor film is to be formed, is received into the substrate chamber 104 through a susceptor 107. Lamps 105 emitting ultraviolet beams are disposed into the lamp chamber 103 while upper surfaces are covered with a mirror 106. Pressure in the chamber 101 is decompressed up to 10<-1>-10<-2>Torr, ultraviolet beams are projected to the surface of the substrate 108 to purify the surface, and the substrate is shifted into a film growth device without being exposed to atmospheric air. The effect of purification is further improved when infrared beams by a laser light source are irradiated at the same time with the ultraviolet beams or alternately by the two beams.
Inventors:
HAMANO KUNIYUKI
NUMAZAWA YOUICHIROU
YAMAZAKI KOUJI
NUMAZAWA YOUICHIROU
YAMAZAKI KOUJI
Application Number:
JP13611983A
Publication Date:
February 13, 1985
Filing Date:
July 26, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/30; H01L21/027; H01L21/268; H01L21/304; (IPC1-7): H01L21/30
Domestic Patent References:
| JPS5815939A | 1983-01-29 | |||
| JPS4999558A | 1974-09-20 | |||
| JPS5121784A | 1976-02-21 | |||
| JPS5569266A | 1980-05-24 |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)