PURPOSE: To control the width of an active layer with good reproducibility and the ohmic contact with an electrode by utilizing side etching is easily made available.
CONSTITUTION: After a P type clad layer 13 of InP, etc., the active layer 14 of InGaAsP, etc., and an N type clad layer 15 of InP, etc. are formed successively on a substrate 12, the clad layer 15 is etched with an insulator 20 as the mask, and thus the active layer 14 is exposed. Next, the exposed part of the active layer 14 is etched with sulfuric acid etchant, etc., and the active layer 14 is left to a narrow width under the clad layer 15 by performing the side etching of the active layer 14. Then, the clad layer 13 and the substrate 12 are etched to the width direction with chloric acid etchant, etc. with the remaining active layer 14 as the mask, and accordingly the vertical part 19 of the clad layer 13 is formed. Thereafter, an N type block layer 16 and a P type enclosed layer 17 which cover the remaining clad layer and the remaining active layer are formed, and electrodes 11 and 18 are provided.
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HORIKAWA HIDEAKI
KAWAI YOSHIO
