To provide a tool for manufacturing a diamond film coated semiconductor for machining lead wire of a semiconductor device, etc. capable of suppressing damage due to static electricity of the semiconductor device at the time of machining by preventing electrostatic charge of the tool.

In this tool, a diamond film is coated on the surface of a base material. The base material is cemented carbide or cermet. The diamond film has outermost layer and inner layer. The outermost layer of the diamond film is a conductive diamond film containing boron. The outermost layer and the base material are electrically connected. Average surface roughness of the outermost layer is ≤0.2μm in Ra, and an average particle size of diamond crystal particles in the outermost layer is made ≤1.5μm.