To provide a transistor element in which low-voltage large-current modulation can be carried out between the emitter electrode and the collector electrode, to provide a method of manufacturing the transistor element, and to provide a light-emitting element and a display having the transistor element.
In a transistor element, a semiconductor layer 5 (5A, 5B) and a sheet base-electrode 4 are provided between the emitter electrode 3 and the collector electrode 2. The semiconductor layer 5 is provided between the emitter electrode 3 and the base electrode 4, and between the collector electrode 2 and the base electrode 4 to constitute the second semiconductor layer 5B and the first semiconductor layer 5A, respectively. Preferably, the thickness of the base electrode is ≤80 nm. Also, a dark current suppression layer may be provided at least between the emitter electrode and the base electrode or between the collector electrode and the base electrode.
COPYRIGHT: (C)2010,JPO&INPIT
Kenichi Nakayama
大日本印刷株式会社
パイオニア株式会社
株式会社リコー
三洋電機株式会社
住友化学株式会社
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