To provide a transistor oscillator which is suitable for downsizing and exhibits only small deterioration in Q.
The transistor oscillator employs a transistor 1 the gain bandwidth product frequency of which is ≥15 GHz, and a cylindrical dielectric resonator 4 whose specific dielectric constant is ≥70. The dielectric resonator 4 is adhered and fixed between a pair of linear microstrip lines 2, 3 formed nearly in parallel on a circuit board 7. The base B and the collector C of the transistor 1 are respectively connected to the ends of the microstrip lines 2, 3. Through the layout above, high frequency coupling is formed between part of both microstrip lines 2, 3 and the dielectric resonator 4, and hence deterioration in the Q can be suppressed. Further, since the size of the dielectric resonator 4 itself and the occupation area of both microstrip lines 2, 3 can be decreased, downsizing of the transistor oscillator is attained.
Ichiro Suzuki
Hirohiro Ichimura
Kazuo Kobayashi