PURPOSE: To facilitate the integration by providing a semiconductor layer having a metal lattice on a semi-insulating substrate, and providing the first electrode on the upper surface of a semiconductor layer and an impurity region connected to the second electrode on the upper surface of the semiconductor layer on the lower surface.
CONSTITUTION: A semiconductor layer 3 for forming a current path is provided on a GaAs semi-insulating substrate 1. A metal lattice made of tungsten film 4 is arranged in the layer 3 to form a base. S ions are implanted to the lower surface of the layer 3 to form an N+ type layer 2, connected to a contacting electrode 8 on the upper surface of the layer 3 through an N+ type layer 5, and an emitter electrode 7 is provided on the upper surface of the layer 3. Since the electrode 7 and a collector electrode 8 are led to the upper surface of the substrate, the integration can be facilitated, and since the semi-insulating substrate is used, the floating capacity can be reduced.
| JPH08107197 | QUANTUM EFFECT DIODE |
TAKAHASHI SUSUMU
FUKUZAWA TADASHI
TANAKA HIRONORI
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