PURPOSE: To facilitate a pattern wiring in a transistor by forming pectinated thick second base electrodes and second emitter electrodes extending in a direction perpendicular to first base electrodes and first emitter electrodes to prevent a voltage from dropping, a switching speed from being decelerated and a breakdown withstanding voltage from decreasing.

CONSTITUTION: A base region 2 formed in a semiconductor substrate 1 to be come a collector region, a multiemitter region 3 formed in the region 2, and a first insulating layer 3' covered on the regions are formed. First base electrodes 4, 4',.. and first emitter electrodes 5, 5',.. formed alternately in a stripe state extending parallel to one direction in ohmic contact with the regions 2, 3 through the layer 3' and a second insulating layer 6 covered thereon are formed. Further, pectinated second emitter electrodes 7 and second base electrodes 8 formed thicker than the width of the first electrode extending in a direction perpendicular to the electrode in ohmic contact with the electrode through the layer 6 are formed.