To provide a transparent electrically conductive film having high light transmittance in the wavelength of ≤400 nm, and to provide a transparent electrically conductive base material comprising the same.

The transparent electrically conductive film is an oxide film obtained by a d.c. sputtering process using, as a sputtering target, an oxide sintered compact mainly comprising gallium, indium and oxygen, and in which the atomic ratio of the gallium to the indium is 0.97 to <1.86, and mainly composed of a gallium indium oxide phase (β-GaInO3 phase) with a β-Ga2O3 type structure and an indium oxide phase (In2O3 phase) with a bixbyite type structure, and also, in which the X-ray diffraction peak intensity ratio defined by the formula of In2O3 phase (400)/β-GaInO3 phase (111)×100 [%] is ≤45%, and density is ≥5.8 g/cm3, and is an amorphous film mainly comprising gallium, indium and oxide, and in which the atomic ratio of the gallium to the indium is 0.97 to <1.86, and in which the shortest wavelength at which the permeability of the film itself other than a substrate shows 50% is ≤350 nm.