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Title:
透明電極、透明電極の製造方法、および電子デバイス
Document Type and Number:
Japanese Patent JP7153166
Kind Code:
B2
Abstract:
Provided are a transparent electrode having low resistance and high stability against impurities such as halogen and sulfur, a method of producing the transparent electrode, and an electronic device using the transparent electrode.A transparent electrode according to an embodiment includes a transparent substrate and a plurality of conductive regions disposed on a surface of the transparent substrate and separated from each other by a separation region, wherein the conductive region has a structure in which a first transparent conductive metal oxide layer, a metal layer, and a second transparent conductive metal oxide layer are laminated in this order from the substrate side, and in the separation region, there is disposed a trapping material that traps any one or more of halogen, sulfur, or oxygen. This transparent electrode can be produced by scribing the conductive region to form a separation region, and then using a halide or a sulfur compound.

Inventors:
Katsuyuki Naito
Naomi Shinoda
Minoru Saida
Application Number:
JP2022513343A
Publication Date:
October 13, 2022
Filing Date:
September 09, 2020
Export Citation:
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Assignee:
Toshiba Corporation
Toshiba Energy Systems Co., Ltd.
International Classes:
H01L31/0224; H01B5/14; H01L51/50; H05B33/10; H05B33/26; H05B33/28
Domestic Patent References:
JP2019021599A
JP2017135379A
Foreign References:
KR1020180020624A
US20150130726
CN105038222A
KR1020180098019A
Attorney, Agent or Firm:
Nakamura Yukitaka
Miyajima Manabu
Takeshi Sekine
Jun Suzuki
Maekawa Hideaki