Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3150016
Kind Code:
B2
Abstract:
PURPOSE: To make it possible to inhibit an increase of the concentration of impurities in the growth layer when an n type semiconductor layer and a p type semiconductor layer are grown in liquid epitaxial growth.
CONSTITUTION: A Group IV element is slowly cooled in liquid epitaxial growth while a substrate 1 is in contact with a Group III-V compound semiconductor solution, a preset amount of which has been doped, and an n type semiconductor layer 2 is grown on the substrate 1. Then, through natural inversion, a p type semiconductor layer 3 is grown. When the p type semiconductor layer 3 is in the proces of growth to a thickness of 3a of 10 to 20μm, ammonia gas is introduced into an atmosphere surrounding the substrate 1 and the above solution.
Inventors:
Kaku Izumi
Application Number:
JP20934993A
Publication Date:
March 26, 2001
Filing Date:
August 24, 1993
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/208; H01L33/30; (IPC1-7): H01L33/00; H01L21/208
Domestic Patent References:
| JP62186576A | ||||
| JP5295189A | ||||
| JP730186A |
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)
Previous Patent: 電工ドラム
Next Patent: OBSTACLE EVADING PATH DECIDING METHOD APPLYING STEP SEARCHING METHOD
Next Patent: OBSTACLE EVADING PATH DECIDING METHOD APPLYING STEP SEARCHING METHOD