Title:
TREATING GAS FILLING PORT AND EXHAUSTING PORT STRUCTURE
Document Type and Number:
Japanese Patent JP3288035
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a treating gas filling port and exhausting port structure used together with a continuously chemical vapor deposition reactor having a connecting part between reaction chambers.
SOLUTION: The treating gas filling port and exhausting port structure is used together with the continuously chemical vapor deposition reactor having the connecting part between reaction chambers. In this case, the connecting part on one end of the reaction chamber is a gas input connector, and the connecting part on the other end of the reaction chamber is a gas exhaust connector. The treating gas filling port and exhausting port structure comprises a gas plenum in the gas input connector having a single input gas filling port, a plurality of gas filling ports positioned at a side of the plenum opposed to the signal input gas filling port and disposed to receive a gas of an equal amount from the input gas filling port to distribute the gas to the reaction chambers, an exhaust port of the exhaust connector positioned at the end of the reaction chamber opposed to the input connector and positioned at a center with respect to the end of the reaction chamber adjacent to the exhaust connector, and a shutter for partly closing the plurality of the gas filling ports to distribute the gas to the reaction chambers.
Inventors:
Kaoru Ishii
Thomas F Wilkinson
Masayuki Moroi
Thomas F Wilkinson
Masayuki Moroi
Application Number:
JP2001112664A
Publication Date:
June 04, 2002
Filing Date:
December 20, 1989
Export Citation:
Assignee:
Texas Instruments Incorporated
International Classes:
C23C16/44; C23C16/455; C23C16/54; H01L21/00; H01L21/205; H01L21/31; (IPC1-7): C23C16/455; H01L21/205; H01L21/31
Domestic Patent References:
| JP5230794A |
Attorney, Agent or Firm:
Minoru Nakamura (6 outside)