Title:
TREATMENT OF CRUCIBLE FOR MOLECULAR BEAM EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPH03183692
Kind Code:
A
Abstract:
PURPOSE:To remove the impurities in a crucible at a relatively low temp. in a short time by putting the crucible in molten Ga after chemical cleaning, heating the crucible in H2, taking out the heated crucible and further heating it in H2 contg. HCl. CONSTITUTION:A crucible 4 for feeding a starting material used to grow a semiconductor crystal by molecular beam epitaxial growth is treated as follows: the crucible 4 is put in molten Ca 3, heated 5 in H2 and taken out and the crucible 4 with stuck molten Ga is further heated 5 in H2 contg. HCl.
Inventors:
ITO MICHIHIRO
Application Number:
JP32178789A
Publication Date:
August 09, 1991
Filing Date:
December 11, 1989
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C30B23/08; H01L21/203; (IPC1-7): C30B23/08; H01L21/203
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)
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