Title:
TREATMENT DEVICE OF SEMICONDUCTOR SUBSTRATE BY LIQUID
Document Type and Number:
Japanese Patent JP3134483
Kind Code:
B2
Abstract:
PURPOSE: To provide a treatment device of a semiconductor device by liquid able to perform treatment by liquid with a small number of processes in a short time while enabling productivity to be heightened and making it needless to use a coating material or the like so as to solve a problem such as contamination.
CONSTITUTION: This treatment device has the constitution where a first discharge opening 21 discharging a treatment liquid 31 is provided on the surface 1a of a semiconductor substrate 1, a second discharge opening 22 discharging the treatment liquid is provided on the rear 1b of the semiconductor substrate 1 while the same or different treatment liquids are simultaneously discharged from the first and second discharge openings in order to simultaneously perform the treatment of the surface 1a and the rear 1b of the semiconductor substrate 1.
Inventors:
片岡 豊▲隆▼
Dr. Yamamoto
Dr. Yamamoto
Application Number:
JP10373792A
Publication Date:
February 13, 2001
Filing Date:
March 30, 1992
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/30; H01L21/027; H01L21/304; H01L21/306; (IPC1-7): H01L21/304; H01L21/306
Domestic Patent References:
| JP2288230A | ||||
| JP5160104A |
Attorney, Agent or Firm:
Toru Takatsuki