Title:
TREATMENT OF FERROELECTRIC
Document Type and Number:
Japanese Patent JP3254734
Kind Code:
B2
Abstract:
PURPOSE: To avoid the deterioration in characteristics and life by a method wherein the ferroelectronic annealed in an inert gas atmosphere is once annealed in an oxygen atmosphere to be annealed again in another insert gas atmosphere.
CONSTITUTION: The movement theory of sodium ions by electric fields and the formation theory of depleted oxygen are advocated for the cause of deterioration in the ferroelectrics. However, neither of them can be confirmed yet and another theory that the hydrogen contained in the ferroelectrics is to be moved by electric fields for the formation of space charges can be verified by the fact that the characteristics of ferroelectrics, when hydrogen annealed, it to be remarkably deteriorated. That is, the hydrogen contained in the ferroelectric can be discharged by an annealing process in an inert gas atmosphere thereby enabling the deterioration in characteristics and life of a ferroelectronic body element to be avoided. For example, a PZT film formed by sputter evaporating step in an argon atmosphere is photo-etched away and then after annealing it in argon gas atmosphere to form a polycrystalline PZT film by annealing it again later in oxygen atmosphere, an upper electrode is to be formed.
More Like This:
Inventors:
Seiichi Iwamatsu
Application Number:
JP15645792A
Publication Date:
February 12, 2002
Filing Date:
June 16, 1992
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H01G4/12; H01L21/324; (IPC1-7): H01G4/12; H01L21/324
Domestic Patent References:
| JP4167554A | ||||
| JP4119620A |
Attorney, Agent or Firm:
Masataka Ueyanagi