TREATMENT OF SILICON WAFER - NITTO DENKO CORP

Title:

TREATMENT OF SILICON WAFER

Document Type and Number:

Japanese Patent JP2000331965

Kind Code:

A

Abstract:

To pick up a silicon wafer fixed on a pedestal after the wafer is worked by sandblasting, without damaging the workability and work environment and in addition, to recover the pedestal after picking up the wafer without damaging the workability and work environment.

In a method for treating silicon wafer, a silicon wafer 11 fixed on a pedestal 12 is picked up, after the wafer is worked to a prescribed pattern by sandblasting. At fixing the wafer 11 on the pedestal 12, a double-coated adhesive sheet 10 is used as a means for fixing the wafer 11 on the pedestal 12 and is removed from the pedestal 12, after the wafer 11 is picked up.

Inventors:

YAMAMOTO MASAYUKI
MIKI KAZUYUKI
NAMIKAWA AKIRA

Application Number:

JP14243799A

Publication Date:

November 30, 2000

Filing Date:

May 21, 1999

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NITTO DENKO CORP

International Classes:

B24C1/04; H01L21/301; H01L21/68; H01L21/683; (IPC1-7): H01L21/301; B24C1/04; H01L21/68

Attorney, Agent or Firm:

Ogi

Previous Patent: METHOD AND DEVICE FOR DIVIDING SUBSTRATE

Next Patent: METHOD FOR TREATING SILICON WAFER