Title:
TRENCH CAPACITOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3452511
Kind Code:
B
Abstract:
PROBLEM TO BE SOLVED: To provide a trench capacitor structure suited for use in a semiconductor integrated circuit device and also provide a process sequence used for forming the structure.
SOLUTION: A trench structure wherein a trench is demarcated in a semiconductor substrate 100 includes a trench wall, a silicon buried plate 14 doped with conductive species existing in part of the semiconductor substrate around the trench wall, and a silicon structure with texture formed along part of the trench wall. This trench capacitor has improved capacitance by including a capacitor plate constituted of semispherical silicons with texture.
Inventors:
Bronner, Gary B.
Economikos, Laertis
Jammy, Rajarao
Park, Byeongju
Radens, Carl J.
Schrems, Martin E.
Economikos, Laertis
Jammy, Rajarao
Park, Byeongju
Radens, Carl J.
Schrems, Martin E.
Application Number:
JP1999000214764
Publication Date:
July 18, 2003
Filing Date:
July 29, 1999
Export Citation:
Assignee:
INTERNATL BUSINESS MACH CORP <IBM>
SIEMENS AG
SIEMENS AG
International Classes:
H01L21/02; H01L21/334; H01L21/8242; H01L27/108; H01L29/94; H01L21/3215; (IPC1-7): H01L21/8242; H01L27/108
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