Title:
TUNNEL MAGNETORESISTIVE ELEMENT AND TUNNEL MAGNETIC RESISTANCE SENSOR
Document Type and Number:
Japanese Patent JP2020136551
Kind Code:
A
Abstract:
To provide a tunnel magnetoresistive element in which deterioration in a TMR ratio due to a parasitic resistance can bd suppressed, and provide a tunnel magnetic resistance sensor.SOLUTION: The tunnel magnetoresistive element includes: a fixed layer 17 in which a magnetization direction is fixed; a free layer 15 in which the magnetization direction can be changed; and a tunnel barrier layer 16 which is arranged between the fixed layer 17 and the free layer 15. A first electrode layer 14 is arranged on a side one of sides opposite to a tunnel barrier layer 16, of the fixed layer 17 and opposite to the tunnel barrier layer 16, of the free layer 15. A second electrode layer 19 is arranged on the side opposite to the first electrode layer 14 out of the side opposite to the tunnel barrier layer 16 of the fixed layer 17 and the side opposite to the tunnel barrier layer 16 of the free layer 15. A conductive buffer layer 13 is provided so as to contact a surface opposite to the fixed layer 17 or the free layer 15, of the first electrode layer 14.SELECTED DRAWING: Figure 1
Inventors:
FUJIWARA KOSUKE
KUMAGAI SEIJI
ANDO YASUO
OKANE MIKIHIKO
KUMAGAI SEIJI
ANDO YASUO
OKANE MIKIHIKO
Application Number:
JP2019030126A
Publication Date:
August 31, 2020
Filing Date:
February 22, 2019
Export Citation:
Assignee:
SPIN SENSING FACTORY CO LTD
UNIV TOHOKU
UNIV TOHOKU
International Classes:
H01L43/10; H01L43/08
Domestic Patent References:
| JP2001102659A | 2001-04-13 | |||
| JP2016015412A | 2016-01-28 | |||
| JP2000215415A | 2000-08-04 | |||
| JP2016021518A | 2016-02-04 |
Foreign References:
| WO2012032962A1 | 2012-03-15 |
Attorney, Agent or Firm:
Atsushi Suda
Shuji Kusunoki
Shuji Kusunoki