Title:
TWO-CYCLE WAVE EXCITATION PLASMA DEVICE USING ROTATING MAGNETIC FIELD
Document Type and Number:
Japanese Patent JP3113344
Kind Code:
B2
Abstract:
PURPOSE: To even the plasma density on a wafer, and to even the distribution of ion irradiation energy, and to even the etching speed inside of a wafer as a dry etching device.
CONSTITUTION: A high frequency power source 3 is connected to a first electrode 2, which is provided inside of a vacuum chamber 1 and mounted with a material to be treated (wafer), and a second electrode 4 is arranged opposite to the first electrode 2, and a second high frequency power source 5 is connected thereto, and electromagnetic coils 6 for generating the rotating magnetic field in the periphery of the vacuum chamber are provided. Opposite directional electric fields are thereby generated between the plasma and each the first/ second electrodes, and the unevenness due to the movement of plasma is offset to obtain the even distribution of the density of plasma.
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Inventors:
Haruhiro Goto
Tadahiro Ohmi
Tadahiro Ohmi
Application Number:
JP30599191A
Publication Date:
November 27, 2000
Filing Date:
November 21, 1991
Export Citation:
Assignee:
Applied Materials Japan Co., Ltd.
Tadahiro Ohmi
Tadahiro Ohmi
International Classes:
C23C16/50; C23F4/00; H01L21/302; H01L21/3065; H05H1/46; F02B75/02; (IPC1-7): H05H1/46; C23C16/50; C23F4/00; H01L21/3065
Domestic Patent References:
| JP4346225A | ||||
| JP5287559A |
Attorney, Agent or Firm:
Minoru Nakamura (7 outside)