Title:
二段デッキ三次元ＮＡＮＤメモリ、およびそれを製作するための方法
Document Type and Number:
Japanese Patent JP7433343
Kind Code:
B2
Abstract:
A method for forming a three-dimensional (3D) memory device is disclosed. In some embodiments, the method includes forming an alternating dielectric stack on a substrate, and forming a plurality of channel holes penetrating the alternating dielectric stack vertically to expose at least a portion of the substrate. A first mask can be formed to cover the channel holes in a first area and expose the channel holes in a second area. The method also includes forming a recess in the alternating dielectric stack in the second area, followed by forming a second mask in the recess. The second mask covers the channel holes in the second area and exposes the channel holes in the first area. The memory film at bottom of each channel hole in the first area can therefore be removed, while the memory film in the second area can be protected by the second mask.
Inventors:
Fen le
Jin Gao
Wenbin Jou
Jin Gao
Wenbin Jou
Application Number:
JP2021570983A
Publication Date:
February 19, 2024
Filing Date:
January 17, 2020
Export Citation:
Assignee:
Yangtze Memory Technologies Co.,Ltd.
International Classes:
H10B43/27; H10B41/27
Domestic Patent References:
| JP2018160616A |
Foreign References:
| US20160204117 | ||||
| US20170103996 | ||||
| US20170271261 | ||||
| CN109887918A | ||||
| CN108093656A |
Attorney, Agent or Firm:
Yasuhiko Murayama
Shinya Mihiro
Tatsuhiko Abe
Shinya Mihiro
Tatsuhiko Abe