PURPOSE: To achieve high circuit integration and to improve the manufacturing yield, by avoiding crossed parts of X and Y buses and introducing one layer electrode construction of wiring.

CONSTITUTION: An insulation film 37 is formed on a P type substrate 36a of a band shape constituent 40, and an active region 39 formed on the substrate 36a is limited by an insulation layer 38. Transparent isolating electrodes 46∼49 are located on the active region 39, and wells 61∼64 are formed by applying a voltage to the electrodes 46∼49. Band shape constituents 40a∼40d of this constitution are provided in parallel on an N type substrate 36b, electrodes of the equi-potential are connected commonly to make band shape isolating electrodes 51∼54, and a video element 1 beneath the electrodes is made to a matrix shape of the isolation gate construction. A prescribed voltage is applied from a horizontal shift register 10 to the transparent band shape conductor, and a prescribed voltage is applied to the band shape constituents 40a∼40d from a vertical shift register 20. Thus, crossing parts of X and Y buses of a two-dimension solid-state image sensor are eliminated to integrate circuit highly.