Title:
銅配線用超低誘電絶縁膜
Document Type and Number:
Japanese Patent JP2007513514
Kind Code:
A
Abstract:
The present invention relates to an ultra-low dielectric film for a copper interconnect, in particular, to an porous film prepared in such a manner that coating with an organic solution containing a polyalkyl silsesquioxane precursor or its copolymer as a matrix and acetylcyclodextrin nanoparticles as a template and then performing a sol-gel reaction and heat treatment at higher temperature. The present films may contain the template of up to 60 vol %, due to the use of acetylcyclodextrin, and have homogeneously distributed pores with the size of no more than 5 nm in the matrix. In addition, the present films exhibit a relatively low dielectric constant of about 1.5, and excellent interconnectivity between pores, so that they are considered a promising ultra-low dielectric film for a copper interconnect.
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Inventors:
Lihiu
Yoon Do Young
Chak Khon
Regingu
Moon Bong Jin
Min Sung Kyu
Paksejong
Shin Jae Jin
Yoon Do Young
Chak Khon
Regingu
Moon Bong Jin
Min Sung Kyu
Paksejong
Shin Jae Jin
Application Number:
JP2006542486A
Publication Date:
May 24, 2007
Filing Date:
May 12, 2004
Export Citation:
Assignee:
Industry-University Cooperation Foundation Sogang University
International Classes:
H01L21/31; H01L21/316; C08J9/26; C09D5/25; C09D105/16; C09D183/14; H01L21/768; H01L23/532
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura