Title:
紫外透明導電膜とその製造方法
Document Type and Number:
Japanese Patent JP4083396
Kind Code:
B2
Abstract:
The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, spattering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500 DEG C and an oxygen partial pressure of 0 to 1 Pa.
Inventors:
Masahiro Orita
Hiromichi Ota
Masahiro Hirano
Hideo Hosono
Hiromichi Ota
Masahiro Hirano
Hideo Hosono
Application Number:
JP2001182643A
Publication Date:
April 30, 2008
Filing Date:
June 15, 2001
Export Citation:
Assignee:
Japan Science and Technology Agency
Hiromichi Ota
Masahiro Orita
Hiromichi Ota
Masahiro Orita
International Classes:
H01B5/14; C23C14/08; C23C16/40; C30B23/02; C30B25/02; H01B13/00; H01L31/0224; H01L31/04; H01L31/18; H01L51/00; H01L51/40
Other References:
Naoyuki Ueda et al.,Synthesis and control of conductivity of ultraviolet transmitting Ga2O3 single frystals,Applied Physics Letter ,米国,1997年 6月30日,Vol.70, No.26,3561-3563
Attorney, Agent or Firm:
Yoshiyuki Nishi