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Title:
UNDER BUMP METAL OR BUMP OF SEMICONDUCTOR ELEMENT AND ITS FORMING METHOD
Document Type and Number:
Japanese Patent JP2002151537
Kind Code:
A
Abstract:

To provide a method for forming an under bump metal or bump on a metal electrode with high uniformity, adhesion and reliability, and to obtain a highly reliable semiconductor device by that method.

At the time of pretreatment preceding to nickel plating on a metal electrode, a chip or wafer fixed with an electrode is cleaned at least once with an organic solvent and then cleaned with UV ozone thus suppressing difference of processing in one electrode, between respective electrodes on one chip, and between electrodes on a wafer and between wafers. Furthermore, a centrally recessed UBM can be formed by increasing the concentration of nickel plating liquid. Consequently, a UBM or a bump having excellent uniformity, adhesion and reliability can be formed. Furthermore, a highly reliable semiconductor device can be obtained by that method.


Inventors:
YAMAMOTO YUKIHIRO
TATSUMI KOHEI
HASHINO HIDEJI
Application Number:
JP2000342798A
Publication Date:
May 24, 2002
Filing Date:
November 10, 2000
Export Citation:
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Assignee:
NIPPON STEEL CORP
International Classes:
H01L21/60; (IPC1-7): H01L21/60
Domestic Patent References:
JP2000200798A2000-07-18
JPS647542A1989-01-11
JP2000260801A2000-09-22
JPH08264541A1996-10-11
JPH11214421A1999-08-06
JP2000286299A2000-10-13
JP2000277554A2000-10-06
Attorney, Agent or Firm:
Shunta Naito (1 outside)



 
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