To provide an undercoating layer forming material for lithography which has good storage stability, ensures excellence in the form of the lower portion of a resist pattern and solves the problem such as lowering of burying properties and occurrence of voids, and to provide a method for forming a wiring using the same.

The undercoating layer forming material for lithography contains at least polysiloxane and an organotitanium compound having no alkoxy group. The method for forming a wiring includes a photoresist pattern forming step of applying the undercoating layer forming material for lithography onto a substrate, curing it to form an undercoating layer, forming a photoresist layer thereon, and forming a predetermined photoresist pattern; an undercoating layer patterning step of removing the exposed portion of the undercoating layer by dry etching; a wiring pattern forming step of forming a predetermined wiring pattern using the photoresist pattern and the patterned undercoating layer as masks; and an undercoating layer removing step of removing the undercoating layer and photoresist pattern remaining on the substrate.