PURPOSE: To attain high vacuum in a short time without conducting baking or by conducting low temperature baking alone by forming BN(boron nitride) layers on the internal surfaces of a vacuum container.
CONSTITUTION: In the case of a vacuum container 1 such as a vacuum storage warehouse, a vacuum box used at the time of keeping semiconductor wafers 6 or glass substrates, BN layers are formed on the inner surfaces of the vacuum container 1. That is, BN treatment is administered on the internal surfaces of a box main body 2 and a lid body 3 that are exposed to vacuum, and BN layers 7 are formed. Meanwhile, BN layers are not administered at portions to be shielded by means of O rings 4 and a port opening 5 to conduct vacuum exhaust and vacuum leak. This BN treatment is conducted by a micro CVD method, an RF plasma CVD method or the like, and either of c-BN and h-BN is used as the structure of a BN material. As a result, baking treatment or the like conducted at every time when the vacuum container 1 is opened to atmosphere to realize a high vacuum degree, is made unnecessary.
ONO KOJI
MATSUMURA MASAO
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