Title:
VACUUM TREATING DEVICE FOR PRODUCING SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2663914
Kind Code:
B2
Abstract:
PURPOSE: To prevent the particle adhesion to a semiconductor substrate which results from a sharp pressure change in initial evacuation in the case of vacuum evacuation of the reaction chamber of a vacuum treating device for producing semiconductors from the atm. pressure.
CONSTITUTION: A moving plate 10 coupled to an elastic material 11 is arranged in a vacuum piping 9 connecting the reaction chamber 1 and a vacuum pump 6. This moving plate 10 automatically varies the conductance in the vacuum piping from low to high according to the change in the pressure difference between the outlet side of the reaction chamber and the inlet side of the vacuum pump from high to low. As a result, the evacuation by lowering the evacuation rate for the beginning and gradually increasing the evacuation rate is executable at the time of the initial evacuation from the atm. pressure. The sharp change in the pressure of the reaction chamber in the initial evacuation is relaxed and the particle adhesion to the semiconductor substrate are prevented.
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Inventors:
KAIDO ATSUSHI
Application Number:
JP13319295A
Publication Date:
October 15, 1997
Filing Date:
May 31, 1995
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
C23C14/00; C23C16/50; H01L21/203; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): C23C14/00; C23C16/50; H01L21/203; H01L21/205; H01L21/3065
Domestic Patent References:
| JP6137268A |
Attorney, Agent or Firm:
Sugano Naka