To provide a vacuum treating method and the vacuum treating device for decreasing the concentration of impurities in a thin film to be formed or a material to be treated in a vacuum treatment such as CVD, sputtering, molecular beam epitaxy, vacuum deposition, ion implantation or the like.
The release of a gaseous impurity from a vacuum vessel 11 is prevented and the heat of plasma is absorbed by providing a shroud 16 in the vacuum vessel 11 of a plasma CVD device 1 to cover the inside wall, applying a silicone oil at 250°C at the time of baking before film forming to bake the inside wall or the like of the vacuum vessel 1 and applying the silicone oil at -30°C at the time of film forming to prevent the release of the gaseous impurities and to absorb the heat of the plasma. And the vacuum vessel 11 is evacuated to 10-10Torr before film forming by a magnetic bearing type turbo- molecular pump 190 and silane gas of a raw material is introduced into the vacuum vessel 11 through a gas purifier 33.
MATSUDA AKIHISA
UCHIYAMA TOYOJI
AMANO SHIGERU
ULVAC CORP
Yasuo Iisaka
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