Title:
VALVE AND SEMICONDUCTOR MANUFACTURING DEVICE USING THE SAME
Document Type and Number:
Japanese Patent JP3039583
Kind Code:
B2
Abstract:
PURPOSE: To provide a gas valve for a semiconductor manufacturing device which is suitable for forming a semiconductor thin film precisely at a high speed.
CONSTITUTION: A metallic film 1 having one or more movable inflectional surfaces is arranged in a container containing a gas supply opening 15, gas exit openings 13, an exhaust opening 14 and electrodes 12 and 12'. Control voltage is impressed between the electrodes 12 and 12' and the metallic film 1 to move the variation surfaces, and the plurality of opening parts 13 and 14 are opened/closed by means of the film 1. Thereby, since a semiconductor element manufacturing technology is used in the container, the metallic film 1 and so on, a small valve can be constituted, so that it can be applied to a semiconductor manufacturing device to form a semiconductor element thin film accurately at high speed.
Inventors:
Mitsuhiro Shikita
Yoshio Kawamura
Kazuo Sato
Shinji Tanaka
Akira Koide
Yasuaki Horiuchi
Toshimitsu Miyata
Fujisaki Yoshihisa
Yoshio Kawamura
Kazuo Sato
Shinji Tanaka
Akira Koide
Yasuaki Horiuchi
Toshimitsu Miyata
Fujisaki Yoshihisa
Application Number:
JP13662292A
Publication Date:
May 08, 2000
Filing Date:
May 28, 1992
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
F16K31/02; F04B43/04; F15C5/00; F16K99/00; H01L21/205; (IPC1-7): F16K31/02
Attorney, Agent or Firm:
Akio Takahashi (1 person outside)