Title:
気相成長装置及びこれに用いられるキャリア
Document Type and Number:
Japanese Patent JP7147551
Kind Code:
B2
Abstract:
A vapor deposition device is provided that can make uniform a CVD film thickness at a circumferential edge of a wafer. A carrier is formed in an endless ring shape having a bottom surface that rests on a top surface of a susceptor, a top surface touching and supporting an outer edge of a reverse face of a wafer, an outer circumferential wall surface, and an inner circumferential wall surface, and the carrier is also configured with a structure or shape in a circumferential direction of the top surface that has a correspondence relationship to a crystal orientation in the circumferential direction of the wafer, and a before-treatment wafer is mounted on the carrier such that the crystal orientation in the circumferential direction of the before-treatment wafer and the structure or shape in the circumferential direction have a correspondence relationship.
Inventors:
Naoyuki Wada
Yuu Minamide
Yuu Minamide
Application Number:
JP2018244844A
Publication Date:
October 05, 2022
Filing Date:
December 27, 2018
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/205; C23C16/44; C23C16/458; C30B25/12; C30B29/06; C30B35/00; H01L21/673
Domestic Patent References:
| JP11145065A | ||||
| JP2005217018A | ||||
| JP2007294942A | ||||
| JP2015535142A | ||||
| JP2007243167A |
Attorney, Agent or Firm:
Eternal patent business corporation