PURPOSE: To limit the amount of evaporation with good controllability even when a material with high vapor-pressure is used as an evaporating source in such a way that a cooling means using liquid nitrogen is installed around at least one crucible at a multiple evaporation apparatus.

CONSTITUTION: A first crucible 2 and a second crucible 3 are installed inside a vacuum tank 1; a substrate 4 is arranged at the position facing the crucibles. A heater 21 is wound around the crucible 2; Zn is contained inside this crucible. A heater 31 is wound around the crucible 3; a cooling pipe 32 is installed at the outer circumference of the crucible. S is contained inside the crucible 3. With this setup the tank 1 is evacuated to produce a vacuum; the crucibles 2 and 3 are heated while the temperature is controlled independently of each other so that the amount of evaporation for each crucible can be controlled. As a result, it is possible to obtain a good epitaxial growth layer or a pillar- shaped polycrystal. Because liquid nitrogen is fed to the cooling pipe 32 according to the need and is discharged from the cooling pipe 32, it is possible to cool the crucible easily, with good controllability and uniformly.