Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
VAPOR DEPOSITION DEVICE
Document Type and Number:
Japanese Patent JPH04176860
Kind Code:
A
Abstract:

PURPOSE: To continuously form a dielectric film having stable quality by successively replacing a probe electrode provided in a vaporized particle flow with the new probe electrode by a supply means and a recovery means and maintaining the electric effect of the probe electrode.

CONSTITUTION: A vaporized particle flow is formed by heating and vaporizing the dielectric vapor deposition material 3 in a crucible 2 by electron beams emitted from an electron gun 1 in the vacuum atmosphere. The reactive gas introduced from an introduction port 7 is allowed to react with this vaporized particle flow by a probe electrode 4 impressed with plus voltage by an electrode 52. A dielectric film is formed on a base plate 8. At this time, both a probe electrode supply part 5 described below and a recovery part 6 having the same shape are provided. The probe electrode supply part 5 consists of a bobbin 51 for surrounding the probe electrode 4, a motor 53 for rotating the bobbin 51 and an antisticking cover 54. In this constitution, a new probe electrode 4 is sent from a supply part 5 at speed correspondent to the rate of vapor deposition. The used probe electrode 4 is wound in the recovery part 6. Thereby discharge and reaction are continuously maintained and the dielectric film is formed in the stable film formation conditions. The dielectric film is obtained which is homogeneous in the thickness direction.


More Like This:
Inventors:
HAYAKAWA SAI
KAMEYAMA MAKOTO
TERADA JUNJI
SUZUKI HIROYUKI
SAWAMURA MITSUHARU
Application Number:
JP30116790A
Publication Date:
June 24, 1992
Filing Date:
November 08, 1990
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
CANON KK
International Classes:
C23C14/32; (IPC1-7): C23C14/32
Attorney, Agent or Firm:
Yamashita