Title:
VAPOR DEPOSITION METHOD OF METAL ON SEMICONDUCTOR WAFER REAR FACE
Document Type and Number:
Japanese Patent JP3169407
Kind Code:
B2
Abstract:
PURPOSE: To prevent a metal from adhering to the front surface of a semiconductor wafer by sticking an adhesive tape composed of adhesive layer and base film layer consisting of thermoplastic resin with the rate of heat shrinkage at the temperature of a specific value, which is not exceeding the percentage of a specific value both in MD and TD directions, on the front surface of the semiconductor wafer having an integrated circuit built-in.
CONSTITUTION: An adhesive tape, which is not exceeding 2% in the rate of heat shrinkage at 130°C, is used in the title method. This adhesive tape is stuck on the surface of a semiconductor wafer having a circuit built-in and the wafer is put in an electron-ray heating metallizing apparatus. Then, gold is put in the apparatus and a pressure is set at 5×10-6Torr and a temperature, at 100°C so that gold is deposited on the rear face of the semiconductor wafer in 3 minutes. After the deposition, the adhesive tape is separated from the semiconductor wafer and the wafer is soaked in pure water at a roomy temperature and washed with ultrasonic wave for 10 minutes. Thus, no metal adheres to the front surface of the semiconductor wafer so that a semiconductor integrated circuit is not damaged by a metal.
Inventors:
Kazuyoshi Komatsu
Osamu Narimatsu
Yasuo Takemura
Yoko Takeuchi
Osamu Narimatsu
Yasuo Takemura
Yoko Takeuchi
Application Number:
JP34079191A
Publication Date:
May 28, 2001
Filing Date:
December 24, 1991
Export Citation:
Assignee:
Mitsui Chemicals, Inc.
International Classes:
C23C14/04; H01L21/203; H01L21/301; H01L21/78; (IPC1-7): H01L21/203
Domestic Patent References:
| JP62106628A | ||||
| JP62119925A |