VAPOR EPITAXIAL GROWTH DEVICE

Title:

VAPOR EPITAXIAL GROWTH DEVICE

Document Type and Number:

Japanese Patent JPH05152350

Kind Code:

A

Abstract:

PURPOSE: To obtain an Hg1-xCdxTe epitaxial crystal having a uniform composition on a substrate.

CONSTITUTION: In a device, which has a gas feed nozzle 4 for spraying gas for epitaxial growth use on the surface of a substrate (a substrate) 3 for epitaxial growth use, which is installed in a reaction container 1 and is placed on a rotating substrate heating stage 2, and is provided with a means for heating the substrate, a gas feed opening 5 of the nozzle 4 is arranged in close proximity to the substrate 3. The feed opening 5 is arranged in such a way that the section of the feed opening 5 passes through the enter 6 of rotation of the substrate 3 and covers the upper part of the diameter of said substrate 3 and at the same time, the sectional form of the feed opening 5 is formed in such a way as to become roughly a linear opening part and a gas mixing part 12 for mixing the gas for epitaxial growth use is provided at the upper part of the gas feed opening 5.

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Inventors:

SAKACHI YOICHIRO
SAITO TETSUO
MURAKAMI SATOSHI
NISHINO HIROSHI

Application Number:

JP31416291A

Publication Date:

June 18, 1993

Filing Date:

November 28, 1991

Export Citation:

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Assignee:

FUJITSU LTD

International Classes:

H01L21/205; H01L21/365; (IPC1-7): H01L21/205; H01L21/365

Attorney, Agent or Firm:

Teiichi

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