PURPOSE: To make it possible to perform vapor growth using feedstock having a low vapor pressure with a high degree of reproducibility by installing a pipe from a reactive gas lead-out tube to a reaction tube of a reactive gas feedstock container, a valve and reaction tubes in a portion where it is connected to the pipe inside a heat-keeping container.

CONSTITUTION: A pipe 103 from a reactive gas lead-out tube to a reaction tube 101 of a reactive gas feedstock container 102 and a valve 104 are installed inside a heat-keeping container 11. That is, the section from a reactive gas lead-out tube 103a of a reactive gas feedstock container 102 which is needed to be heated above room temperature to immediately before the place where a semiconductor substrate 100 housed in the reaction tube 101 faces is installed in one heat-keeping container 11. As a result, problems, such as adsorption of feedstock to a pipe or clogging, do not occur in the entire system of a heating system for housing all the main components of a feedstock container open and a pipe system and a stirring system until feedstock gas reaches a growth substrate. Thus, feedstock gas can be transported to a substrate with a high degree of reproducibility.