Title:
VAPOR GROWTH DEVICE AND PRODUCTION OF SEMICONDUCTOR DEVICE USING THE SAME
Document Type and Number:
Japanese Patent JPH0544037
Kind Code:
A
Abstract:
PURPOSE: To provide a device capable of promoting the reaction in vapor growth and performing vapor growth at low temp. and to produce a semiconductor device with the flatness improved.
CONSTITUTION: A vapor growth device 10 is provided with an ultrasonic wave impressing device 1, a device for impressing an ultrasonic device on a gaseous reactant and a device for impressing an ultrasonic wave on a support 2. An ultrasonic wave is impressed on the support 2 and the gaseous reactant to form a film on a substrate 3.
Inventors:
HASHIMOTO TAKESHI
Application Number:
JP19794091A
Publication Date:
February 23, 1993
Filing Date:
August 07, 1991
Export Citation:
Assignee:
KAWASAKI STEEL CO
International Classes:
B01J19/10; C23C16/44; H01L21/205; H01L21/31; H01L21/316; (IPC1-7): B01J19/10; C23C16/44; H01L21/205; H01L21/31; H01L21/316
Attorney, Agent or Firm:
Tetsuya Mori (2 others)
Next Patent: CVD DEVICE