PURPOSE: To provide a means for vapor-growing a conductor layer consisting of an Al layer or an alloy layer consisting essentially of Al at a high rate by supplying a concd. raw gas to a vapor growth device.
CONSTITUTION: A raw material as at least one kind of element constituting a conductor layer to be grown is supplied in a liq. state, the raw material is vaporized into a concd. raw gas which is introduced into a growth chamber (vapor growth chamber 1), and hence a conductor layer is vapor-grown at a high rate on a growth substrate 3 loaded in a susceptor 2. A substrate with a pattern of the material different from the substrate for the insulator layer, dielectric layer, etc., formed on the upper face is used to selectively grow the conductor layer in accordance with the pattern. An Al layer or an alloy layer consisting essentially of Al is used as the conductive layer. AlH(CH3)2 (DMAH), AlH3.NR (R is an optional alkyl such as N(CH3)2C2H5) (DMEAA), Al (C4H9)3, etc., can be used as the Al raw material.
MATSUMIYA YASUO
KITAHARA KUNINORI
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