VAPOR GROWTH METHOD OF NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT

Japanese Patent JP3714188

B2

PROBLEM TO BE SOLVED: To provide a method for vapor growth of nitride semiconductors, which solves the conventional problem to be caused by excessive supply of material in the top of a growth layer which is generated at the time of selective growth, and is used for manufacturing a nitride semiconductor element wherein element characteristic like light emitting characteristic is superior, and to provide a nitride semiconductor element manufactured by the method.
SOLUTION: In the case that the area of a surface which is almost in parallel with a main face of the base substance of a nitride semiconductor layer which is grown by selective growth is made S (t) (t is time), the area S (t2) of the nitride semiconductor layer at a time t2 is made equal to or smaller than the area S (t1) of the nitride semiconductor layer at a time t1 which is earlier than the time t2, and a material supply amount X2 or a growth speed V2 at the time t2 is made equal to or smaller than a material supplying amount X1 or a growth speed V1 at the time t1. The material supply amount and the growth speed are adjusted corresponding to the area of the nitride semiconductor layer which is reduced in accordance with passage of time, so that excessive supply of material in the top is prevented.

Takeshi Biwa
Hiroyuki Okuyama
Masato Doi
Toyoji Ohata

JP2001120615A

November 09, 2005

April 19, 2001

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ソニー株式会社

C30B25/02; C30B29/40; H01L21/00; H01L21/20; H01L21/205; H01L31/0336; H01L33/00; H01L33/32; H01L33/40; H01S5/323; H01S5/343; H01L33/20; (IPC1-7): H01L21/205; H01L33/00; H01S5/323

JP10312971A

Yoshitsuno Kakuda
Hironobu Isoyama

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