Title:
VAPOR GROWTH METHOD OF SEMICONDUCDOR
Document Type and Number:
Japanese Patent JPS5694620
Kind Code:
A
Abstract:
PURPOSE:To obtain a uniform vapor growth layer by supplying auxiliary reactive raw gas into the turbulent region of the main reactive raw gas at a speed nearly equal to the latter and in the same direction therewith. CONSTITUTION:The tip of a nozzle 1 for the auxiliary reactive raw gas is arranged in the turbulent region M of the main reactive raw gas and the direction of jetting thereof is set in the same with the direction of the flow of the main gas and in parallel to the surface of a substrate. Moreover, the flow rate of the supplementary gas is adjusted 10 so that a monitored value obtained by an analyzer 8 accords with the desired concentration of SiCl4 found separately. When the concentration of SiCl4 in the auxiliary gas is controlled to be about 5-10 times of that in the main reactive gas and the flow speed of the gas supplied 11 is adjusted not to exceed that of the latter, the auxiliary gas is mixed uniformly in the flow of the main reactive gas simultaneously with jetting thereof and thereby the ununiformity of a thin plate formed on the whole of the substrate on the downstream side can be corrected effectively. In addition, since the jetting direction of the auxiliary gas is in parallel to the flow of the main gas, the jetting does not disturb a stagnant region N locally, thus causing no local ununiformity.
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Inventors:
INOUE HIRONORI
AOYAMA TAKASHI
SUZUKI TAKAYA
AOYAMA TAKASHI
SUZUKI TAKAYA
Application Number:
JP16937279A
Publication Date:
July 31, 1981
Filing Date:
December 27, 1979
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/205; C30B25/14; (IPC1-7): H01L21/205