PURPOSE: To obtain the title ceramic superconducting material having excellent uniformity and reproducibility and capable of providing highly reliable IC, etc., in good yield by using the halides of a rare-earth metal, an alkaline-earth metal, and copper as the starting materials, and forming the thin film on a substrate by the chemical vapor growth method.
CONSTITUTION: The growth substrate 6 is placed on the substrate holder 5 provided in a reaction tube 1, and BaCl2, YCl3, and CuCl are placed in respective source boats 4aW4c. The reaction tube 1 is then heated by resistance heating furnaces 2aW2d to generate gaseous BaCl2, gaseous YCl3, and gaseous CuCl. The generated gases are transferred onto the substrate 6 by the carrier gas introduced from a gas inlet 3a. CO2, H2, and the carrier gas are simultaneously introduced from a gas inlet 1a, and sent onto the substrate 6. A chemical reaction shown by the equation is caused on the substrate 6, and the thin film of a high-temp. superconductor is grown on the substrate 6.
KIMURA TAKAAKI
YAMAWAKI HIDEKI
IKEDA KAZUTO
| JPS63225528A | 1988-09-20 | |||
| JPS63244530A | 1988-10-12 | |||
| JPS63274027A | 1988-11-11 |