Title:
VAPOR GROWTH METHOD WITH ORGANOMETALLIC COMPOUND
Document Type and Number:
Japanese Patent JPH04149096
Kind Code:
A
Abstract:
PURPOSE:To improve the uniformity of film thickness and to obtain a crystal having high uniformity with high reproducibility by blowing diverged and converged gaseous starting material on a substrate for growth set on a rotatable substrate holder. CONSTITUTION:A substrate 2 for growth is set on a rotatable substrate holder 3 fixed on a rotating shaft 5 and a nozzle 1 with gas introducing holes 1a-1d and a slit 10 is placed above the substrate 2 on a plane, passing through the center of the substrate 2 in a direction perpendicular to the surface of the substrate 2. An organometallic compd. is introduced into the slit 10 as diverged gaseous starting material through the holes 1a-1d at a controlled flow rate and the starting material is blown on the substrate 2 from the lower edge 10a of the slit 10 in the form of a laminar flow having its width in the diametral direction of the substrate 2 to carry out vapor growth.
Inventors:
AOKI OSAMU
FUJII TAKUYA
FUJII TAKUYA
Application Number:
JP27387190A
Publication Date:
May 22, 1992
Filing Date:
October 12, 1990
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C23C16/44; C23C16/455; C30B25/14; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): C23C16/44; C30B25/14; H01L21/205
Attorney, Agent or Firm:
Teiichi Ijiba (2 outside)